Ensemble GaAsSb/GaAs axial configured nanowire-based separate absorption, charge, and multiplication avalanche near-infrared photodetectors-Reference-Cited by-同舟云学术

Ensemble GaAsSb/GaAs axial configured nanowire-based separate absorption, charge, and multiplication avalanche near-infrared photodetectors

Published:2022 Issue:18 Volume:4 Page:3919-3927
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Parakh M.¹,Pokharel R.¹^ORCID,Dawkins K.¹,Devkota S.¹,Li J.¹,Iyer S.¹^ORCID

Affiliation:

1. Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, North Carolina 27411, USA

Abstract

In this study, molecular beam epitaxially grown axially configured ensemble GaAsSb/GaAs separate absorption, charge, and multiplication (SACM) region-based nanowire avalanche photodetector device on non-patterned Si substrate is presented.

Funder

National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NA/D2NA00359G

Reference44 articles.

1. A review of III–V nanowire infrared photodetectors and sensors

2. Selective-area growth of III-V nanowires and their applications

3. D.Ma , Avalanche photodiodes arrays . 2004