Demonstration of Ditertiary Butyl Sulfide as a Dopant Source for n-Type InP by Metalorganic Vapor-Phase Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=8/a=085501/pdf
Reference18 articles.
1. Growth and characterization of Si, S and Zn-doped InP in selective area growth conditions
2. Doping of InAs, GaSb and InPSb by low pressure MOVPE
3. Sulfur doping of GaAs and GaInP grown by metalorganic molecular beam epitaxy using a hydrogen sulfide gaseous source
4. Doping of gallium arsenide in a low pressure organometallic CVD system
5. RDS characterization of GaAsSb and GaSb grown by MOVPE
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Г-L intervalley separation and electron mobility in GaAsSb grown on InP: Transport comparison with the GaInAs and GaInAsSb alloys;Applied Physics Letters;2021-12-13
2. Uniform and Repeatable Cold-Wall Chemical Vapor Deposition Synthesis of Single-Layer MoS2;Crystal Growth & Design;2016-01-13
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