Doping of InAs, GaSb and InPSb by low pressure MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. AlSb/InAs HEMTs with high transconductance and negligible kink effect
2. InAsSb/AlAsSb double‐heterostructure diode lasers emitting at 4 μm
3. InAsSb/InAlAsSb strained quantum‐well diode lasers emitting at 3.9 μm
4. Investigation of Se-doped GaSb epilayers grown by low pressure metal-organic chemical vapor deposition
5. Zinc doping in gallium antimonide grown by low‐pressure metal‐organic chemical vapor deposition
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1. Epitaxy for Energy Materials;Handbook of Crystal Growth;2015
2. Demonstration of Ditertiary Butyl Sulfide as a Dopant Source for n-Type InP by Metalorganic Vapor-Phase Epitaxy;Applied Physics Express;2011-07-13
3. Progress and continuing challenges in GaSb-based III–V alloys and heterostructures grown by organometallic vapor-phase epitaxy;Journal of Crystal Growth;2004-12
4. Organometallic vapor phase epitaxy of n-GaSb and n-GaInAsSb for low resistance ohmic contacts;Journal of Crystal Growth;2004-01
5. The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials;Materials Science and Engineering: R: Reports;2002-03
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