AlSb/InAs HEMTs with high transconductance and negligible kink effect
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19960408?crawler=true&mimetype=application/pdf
Reference4 articles.
1. Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors
2. Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors
3. Impact ionisation in high-output-conductance region of 0.5 μm AlSb/InAs HEMTs
4. High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistors
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