Characteristics of GaN/Si(111) epitaxy grown using Al0.1Ga0.9N/AlN composite nucleation layers having different thicknesses of AlN-Reference-Cited by-同舟云学术

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Characteristics of GaN/Si(111) epitaxy grown using Al0.1Ga0.9N/AlN composite nucleation layers having different thicknesses of AlN

Published:2002-06 Issue:3 Volume:241 Page:289-296
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jang Seong-Hwan,Lee Seung-Jae,Seo In-Seok,Ahn Haeng-Keun,Lee Oh-Yeon,Leem Jae-Young,Lee Cheul-Ro

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodes

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

4. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

5. High quality GaN grown by MOVPE

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1. LED Materials: Epitaxy and Quantum Well Structures;Handbook of Advanced Lighting Technology;2017

2. LED Materials: Epitaxy and Quantum Well Structures;Handbook of Advanced Lighting Technology;2016

3. Dislocation density and tetragonal distortion of a GaN epilayer on Si (111): A comparative RBS/C and TEM study;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-07

4. Crack-free GaN deposition on Si substrate with temperature-graded AlN buffer growth and the emission characteristics of overgrown InGaN/GaN quantum wells;Journal of Crystal Growth;2014-06

5. High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers;IEEE Journal of Quantum Electronics;2014-05

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