High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers-Reference-Cited by-同舟云学术

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High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

Published:2014-05 Issue:5 Volume:50 Page:354-363
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Li Zhen-Yu,Horng Ray-Hua,Chi Gou-Chung,Chang Chun-Yen,Lee Chia-Yu,Lin Da-Wei,Lin Bing-Cheng,Shen Kun-Ching,Chiu Ching-Hsueh,Tu Po-Min,Kuo Hao-Chung,Uen Wu-Yih

Funder

National Science Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/3/6775320/06737237.pdf?arnumber=6737237

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review on GaN-based two-terminal devices grown on Si substrates;Journal of Alloys and Compounds;2021-07

2. III-nitride semiconductor lasers grown on Si;Progress in Quantum Electronics;2021-05

3. A review of blue light emitting diodes for future solid state lighting and visible light communication applications;Superlattices and Microstructures;2019-12

4. Efficiency Droop and Effective Active Volume in GaN-Based Light-Emitting Diodes Grown on Sapphire and Silicon Substrates;Applied Sciences;2019-10-03

5. Performance-improved vertical GaN-based light-emitting diodes on Si substrates through designing the epitaxial structure;CrystEngComm;2018

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