Crack-free GaN deposition on Si substrate with temperature-graded AlN buffer growth and the emission characteristics of overgrown InGaN/GaN quantum wells-Reference-Cited by-同舟云学术

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Crack-free GaN deposition on Si substrate with temperature-graded AlN buffer growth and the emission characteristics of overgrown InGaN/GaN quantum wells

Published:2014-06 Issue: Volume:396 Page:1-6
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chen Chih-Yen,Chang Wen-Ming,Chung Wei-Lun,Hsieh Chieh,Liao Che-Hao,Ting Shao-Ying,Chen Kuan-Yu,Kiang Yean-Woei,Yang C.C.,Su Wei-Siang,Cheng Yung-Chen

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)

2. High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates

3. Growth of high-quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50%

4. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

5. Design of the low-temperature AlN interlayer for GaN grown on Si (111) substrate

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer;Journal of Alloys and Compounds;2018-01

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