High quality GaN grown by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
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3. Nitrogen precursors in metalorganic vapor phase epitaxy of (Al,Ga)N
4. Optical properties of GaN epitaxial films grown by low‐pressure chemical vapor epitaxy using a new nitrogen source: Hydrazoic acid (HN3)
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