Optical properties of GaN epitaxial films grown by low‐pressure chemical vapor epitaxy using a new nitrogen source: Hydrazoic acid (HN3)-Reference-Cited by-同舟云学术

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Optical properties of GaN epitaxial films grown by low‐pressure chemical vapor epitaxy using a new nitrogen source: Hydrazoic acid (HN3)

Published:1995-05 Issue:18 Volume:66 Page:2433-2435
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bu Y.,Lin M. C.,Fu L. P.,Chtchekine D. G.,Gilliland G. D.,Chen Y.,Ralph S. E.,Stock S. R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.113964

Reference14 articles.

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