Model experiments on growth modes and interface electronics of CuInS2 : Ultrathin epitaxial films on GaAs(100) substrates-Reference-Cited by-同舟云学术

Model experiments on growth modes and interface electronics of CuInS2 : Ultrathin epitaxial films on GaAs(100) substrates

Published:2014-07-19 Issue:9 Volume:211 Page:1981-1990
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Calvet Wolfram¹,Lewerenz Hans-Joachim²,Pettenkofer Christian³

Affiliation:

1. Institute for Heterogeneous Materials Systems; Helmholtz-Zentrum Berlin; Hahn-Meitner-Platz 1 14109 Berlin Germany

2. Joint Center for Artificial Photosynthesis; California Institute of Technology; 1200 E. California Blvd. Pasadena CA 91101 USA

3. Institute Silicon Photovoltaics; Helmholtz-Zentrum Berlin; Kekuléstraße 5 12489 Berlin Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201330429/fullpdf

Reference41 articles.

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2. CuInS2based thin film solar cell with 10.2% efficiency

3. M. Contreras H. Wiesner D. Niles K. Ramanathan R. Matson J. Tuttle J. Keane R. Noufi 1996

4. Heteroepitaxy of CuInS2 on Si(111)

5. Epitaxial growth of CuInS2 on sulphur terminated Si(111)

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