Homoepitaxy of 6H–SiC on nearly on-axis (0001) faces by chemical vapor deposition Part I: Effect of C/Si ratio on wide-area homoepitaxy without 3C

Homoepitaxy of 6H–SiC on nearly on-axis (0001) faces by chemical vapor deposition Part I: Effect of C/Si ratio on wide-area homoepitaxy without 3C–SiC inclusions

Published:2003-09 Issue:3-4 Volume:256 Page:341-346
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nakamura Shunichi,Kimoto Tsunenobu,Matsunami Hiroyuki

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. CI. Observations on carborundum of growth spirals originating from screw dislocations

2. VPE Growth of SiC on Step-Controlled Substrates

3. N. Kuroda, K. Shibahara, W.S. Yoo, S. Nishino, H. Matsunami, Ext. Abstract the 19th Conference on Solid State Devices and Materials, Tokyo, 1987, p. 227.

4. Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H‐SiC{0001} vicinal surfaces

5. Nucleation and step motion in chemical vapor deposition of SiC on 6H‐SiC{0001} faces

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