Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H‐SiC{0001} vicinal surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356439
Reference43 articles.
1. Fabrication of inversion-type n-channel MOSFET's using cubic-SiC on Si
2. Operation of Schottky‐barrier field‐effect transistors of 3C‐SiC up to 400 °C
3. Characterization of device parameters in high‐temperature metal‐oxide‐semiconductor field‐effect transistors in β‐SiC thin films
4. Silicon carbide light-emitting diodes with epitaxial junctions
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