Operation of Schottky‐barrier field‐effect transistors of 3C‐SiC up to 400 °C
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99010
Reference12 articles.
1. High-field transport in wide-band-gap semiconductors
2. Growth and Properties of β‐SiC Single Crystals
3. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
4. High‐temperature electrical properties of 3C‐SiC epitaxial layers grown by chemical vapor deposition
5. Temperature dependence of electrical properties ofn‐ andp‐type 3C‐SiC
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