Comparative study of transient current induced in SiC p+n and n+p diodes by heavy ion micro beams-Reference-Cited by-同舟云学术

Comparative study of transient current induced in SiC p+n and n+p diodes by heavy ion micro beams

Published:2009-06 Issue:12-13 Volume:267 Page:2189-2192
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Ohshima Takeshi,Iwamoto Naoya,Onoda Shinobu,Kamiya Tomihiro,Kawano Katsuyasu

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference24 articles.

1. G.L. Harris (Ed.), Properties of Silicon Carbide, in: EMIS Datareviews Series No. 13, an INSPEC Publication, The Institution of Electrical Engineers, London, United Kingdom, 1995.

2. Operation of Schottky‐barrier field‐effect transistors of 3C‐SiC up to 400 °C

3. γ-Ray irradiation effects on 6H-SiC MOSFET

4. Effect of gamma-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-semiconductor field effect transistor with hydrogen-annealed gate oxide

5. Performance of bulk SiC radiation detectors

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