Effect of gamma-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-semiconductor field effect transistor with hydrogen-annealed gate oxide-Reference-Cited by-同舟云学术

Effect of gamma-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-semiconductor field effect transistor with hydrogen-annealed gate oxide

Published:2001-09-15 Issue:6 Volume:90 Page:3038-3041
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ohshima Takeshi,Itoh Hisayoshi,Yoshikawa Masahito

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1394895

Reference15 articles.

1. Growth and Properties of β‐SiC Single Crystals

2. High-field transport in wide-band-gap semiconductors

3. Operation of Schottky‐barrier field‐effect transistors of 3C‐SiC up to 400 °C

4. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

5. Effects of gamma‐ray irradiation on cubic silicon carbide metal‐oxide‐semiconductor structure

Cited by 49 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Deep Insight Into the Ionizing Radiation Effects and Mechanisms on the Dynamic Characteristics of SiC MOSFETs;IEEE Transactions on Electron Devices;2024-02

2. Saturation thickness of stacked SiO₂ in atomic-layer-deposited Al₂O₃ gate on 4H-SiC;Chinese Physics B;2023-07-01

3. Radiation damage in GaN/AlGaN and SiC electronic and photonic devices;Journal of Vacuum Science & Technology B;2023-04-19

4. Gamma irradiation effects on the charge carriers lifetimes in silicon;Journal of Materials Science;2022-08

5. 3.3 kV Class 4 H-SiC Double-Implanted MOSFET With Excellent Radiation Hardness Against Gamma Rays Using Counter-Doped Junction Termination Extension;IEEE Electron Device Letters;2021-05