Characterization of charge generated in silicon carbide n+p diodes using transient ion beam-induced current-Reference-Cited by-同舟云学术

Characterization of charge generated in silicon carbide n+p diodes using transient ion beam-induced current

Published:2005-04 Issue:1-2 Volume:541 Page:236-240
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Ohshima T.,Satoh T.,Oikawa M.,Yamakawa T.,Onoda S.,Wakasa T.,Laird J.S.,Hirao T.,Kamiya T.,Itoh H.,Kinoshita A.,Tanaka R.,Nakano I.,Iwami M.,Fukushima Y.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

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2. Operation of Schottky‐barrier field‐effect transistors of 3C‐SiC up to 400 °C

3. γ-Ray irradiation effects on 6H-SiC MOSFET

4. Particle detectors based on semi-insulating silicon carbide

5. Performance of bulk SiC radiation detectors

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