Al-implanted on-axis 4H-SiC MOSFETs

Author:

Florentin M,Cabello M,Rebollo J,Montserrat J,Brosselard P,Henry A,Godignon P

Funder

Advanced Wide Band Gap Semiconductor Devices for Rational Use of Energy (RUE CONSOLIDER)

TRENCH-SIC

Silicon Carbide Power Electronics Technology for Energy Efficient Devices (SPPED FP7)

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Comparison of Random and Channeled Implants of Al Ion into 4H-SiC (0001);2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

2. Spatially Resolved Diffusion of Aluminum in 4H-SiC During Postimplantation Annealing;IEEE Transactions on Electron Devices;2020-10

3. Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors;IEEE Transactions on Electron Devices;2018-08

4. Analysis of ZrxSiyOz as High-k Dielectric for 4H-SiC MOSFETs;Materials Science Forum;2018-06

5. Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review;Materials Science in Semiconductor Processing;2018-05

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