Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors-Reference-Cited by-同舟云学术

Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors

Published:2018-08 Issue:8 Volume:65 Page:3361-3364
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Loto O.¹^ORCID,Florentin M.¹,Masante C.¹,Donato N.²^ORCID,Hicks M.-L.³,Pakpour-Tabrizi A. C.³,Jackman R. B.³,Zuerbig V.⁴,Godignon P.⁵,Eon D.¹,Pernot J.¹^ORCID,Udrea F.²^ORCID,Gheeraert E.⁶^ORCID

Affiliation:

1. Département de Physique, Lumiére et Matiére (PLUM), Institute Néel, CNRS, Grenoble INP, University Grenoble Alpes, Grenoble, France

2. Engineering Department, University of Cambridge, Cambridge, U.K.

3. Department of Electronic and Electrical Engineering, London Centre for Nanotechnology, University College London, London, U.K.

4. Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, Germany

5. Centro Nacional de Microelectronica (CNMCSIC), Carrer dels Tillers, Campus UAB, Barcelona, Spain

6. CNRS, Grenoble INP, Institute Neel, University Grenoble Alpes, Grenoble, France

Funder

European Commission

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8416787/08399540.pdf?arnumber=8399540

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