Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Growth and characterization of 4H-SiC epilayers on substrates with different off-cut angles
2. Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer
3. Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC
4. Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields
Cited by 45 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Insights into the effect of susceptor rotational speed in CVD reactor on the quality of 4H-SiC epitaxial layer on homogeneous substrates;Materials Today Communications;2024-03
2. Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H‐SiC Epitaxial Layers;physica status solidi (b);2024-02-10
3. Insights on the Quality of 4h-Sic Layers Epitaxially Grown on Homogeneous Substrates by Changing the Rotational Speed of Susceptor in the Cvd Reactor;2023
4. Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates;Crystals;2022-12-29
5. Surface Uniformity of Wafer-Scale 4H-SiC Epitaxial Layers Grown under Various Epitaxial Conditions;Coatings;2022-04-27
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