High-purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. A study of initial growth mechanism of c-GaN on GaAs(100) by molecular beam epitaxy
2. Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates
3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
4. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
5. GaN Growth Using GaN Buffer Layer
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. TEM investigation of anisotropic defect structure in cubic GaN/AlGaAs/GaAs(001) grown by MOVPE;physica status solidi (c);2011-06-01
2. Thick cubic GaN film growth using ultra-thin low-temperature buffer layer by RF–MBE;Journal of Crystal Growth;2005-05
3. Effect of the nitridation process on cubic GaN film quality grown on AlGaAs buffer layer by RF‐MBE;physica status solidi (c);2004-09
4. A New Approach to the Growth of Cubic GaN Films Using an AlN/GaN Ordered Alloy as a Buffer Layer;physica status solidi (a);2001-12
5. Investigation of the initial growth of cubic-GaN using an AlGaAs buffer layer grown on GaAs (100) by molecular beam epitaxy;Journal of Crystal Growth;2001-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3