Thick cubic GaN film growth using ultra-thin low-temperature buffer layer by RF–MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. High-purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy
2. Single Crystalline InN Films Grown on Si Substrates By Using A Brief Substrate Nitridation Process
3. Characterization of Cubic GaN Films Using An AlN/GaN Ordered Alloy on GaAs (100) by RF-MBE
4. Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs
5. Substrate Nitridation Effects on GaN Grown on GaAs Substrates by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source
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