Effect of the nitridation process on cubic GaN film quality grown on AlGaAs buffer layer by RF‐MBE
Author:
Affiliation:
1. High‐Tech Research Center, Faculty of Science & Engineering, Teikyo University of Science & Technology, 2525 Yatsusawa, Uenohara, Kitatsuru‐gun, Yamanashi, 409‐0193, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200404987
Reference6 articles.
1. High-purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy
2. Single Crystalline InN Films Grown on Si Substrates By Using A Brief Substrate Nitridation Process
3. Characterization of Cubic GaN Films Using An AlN/GaN Ordered Alloy on GaAs (100) by RF-MBE
4. Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs
5. Substrate Nitridation Effects on GaN Grown on GaAs Substrates by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source
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