Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs

Author:

Kuwano Noriyuki,Nagatomo Yoshiyuki,Kobayashi Kenki,Oki Kensuke,Miyoshi Seiro,Yaguchi Hiroyuki,Onabe Kentaro,Shiraki Yasuhiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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2. Analysis of effects of interface-state charges on the electrical characteristics in GaAs/GaN heterojunctions;Japanese Journal of Applied Physics;2017-12-28

3. Precession electron diffraction-assisted crystal phase mapping of metastable c-GaN films grown on (001) GaAs;Microscopy Research and Technique;2014-08-14

4. Atomic Structures and Electronic Properties of Semiconductor Interfaces;Comprehensive Semiconductor Science and Technology;2011

5. Hydride Vapor Phase Epitaxy of GaN;Technology of Gallium Nitride Crystal Growth;2010

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