Investigation of the initial growth of cubic-GaN using an AlGaAs buffer layer grown on GaAs (100) by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. R. Kimura et al., Proceedings of ICCBE-7, Tsukuba, 1999, p. 103; J. Crystal Growth 209 (2000) 382.
2. Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
3. Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AlN Multiple Intermediate Layers
4. A study of initial growth mechanism of c-GaN on GaAs(100) by molecular beam epitaxy
5. Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. TEM Analysis of Structural Phase Transition in MBE Grown Cubic InN on MgO (001) by MBE: Effect of Hexagonal Phase Inclusion in an C-Gan Nucleation Layer;Applied Mechanics and Materials;2012-11
2. TEM investigation of anisotropic defect structure in cubic GaN/AlGaAs/GaAs(001) grown by MOVPE;physica status solidi (c);2011-06-01
3. Improvement of cubic GaN film crystal quality by use of an AlN/GaN ordered alloy on GaAs (100) by plasma assisted molecular beam epitaxy;Journal of Crystal Growth;2003-04
4. Cubic GaN Film Growth Using AlN/GaN Ordered Alloy by RF Plasma‐Assisted Molecular Beam Epitaxy;physica status solidi (c);2002-12-19
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