Aluminum metallization and wire bonding aging in power MOSFET modules
Author:
Publisher
Elsevier BV
Subject
General Medicine
Reference26 articles.
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1. Comparative Investigation on Aging Precursor and Failure Mechanism of Commercial SiC MOSFETs Under Different Power Cycling Conduction Modes;IEEE Transactions on Power Electronics;2023-06
2. Reliable Aluminum Wire-Bonded SiC/Si Diodes With Laminated Al/Cu Stress Buffers;IEEE Transactions on Power Electronics;2022-09
3. Aging Mechanisms and Accelerated Lifetime Tests for SiC MOSFETs: An Overview;IEEE Journal of Emerging and Selected Topics in Power Electronics;2022-02
4. Development of solderable layer on power MOSFET for double-side bonding;Microelectronics Reliability;2022-02
5. Impact of heat treatment on the lifetime of wire-bonded power modules;Microelectronics Reliability;2021-11
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