Comparative Investigation on Aging Precursor and Failure Mechanism of Commercial SiC MOSFETs Under Different Power Cycling Conduction Modes-Reference-Cited by-同舟云学术

Comparative Investigation on Aging Precursor and Failure Mechanism of Commercial SiC MOSFETs Under Different Power Cycling Conduction Modes

Published:2023-06 Issue:6 Volume:38 Page:7142-7155
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Wang Mei¹,Chen Yuan²^ORCID,He Zhiyuan²^ORCID,Wu Zhaohui¹^ORCID,Li Bin¹^ORCID

Affiliation:

1. School of Microelectronics, South China University of Technology, Guangzhou, China

2. National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component, Fifth Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China

Funder

National Natural Science Foundation of China

Foundation for Outstanding Youth in Natural Science of Guangdong Province

Key Realm R&D Program of Guangdong Province

Foshan Core Technology Research Project

Ministry of Industry and Information Technology of the People's Republic of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/10103359/10073614.pdf?arnumber=10073614

Reference50 articles.

1. Real-Time Aging Detection of SiC MOSFETs

2. Study of Current Density Influence on Bond Wire Degradation Rate in SiC MOSFET Modules

3. Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs

4. Power Cycle Testing of Power Switches: A Literature Survey

5. Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental and Simulated Verification of Power Cycling Reliability for Thin and Low Warpage Power Modules;IEEE Transactions on Power Electronics;2024-10

2. Concept of Enabling Over-Current Capability of Silicon-Carbide-Based Power Converters with Gate Voltage Augmentation;Energies;2024-08-28

3. Active Power Cycling of SiC Modules Extended by Long-Term Monitoring of After Test;2024 IEEE 18th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG);2024-06-24

4. A Decoupled Junction Temperature and Aging Level Evaluating Method for SiC MOSFETs;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-06

5. Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress;IEEE Transactions on Electron Devices;2023-12