A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices

Author:

Pietranico S.,Lefebvre S.,Pommier S.,Berkani Bouaroudj M.,Bontemps S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Pietranico S, Pommier S, Lefebvre S, Khatir Z, Bontemps S, Cadel E. Study of ageing of the metallization layer of power semiconductor devices. PCIM; 2010.

2. Arab M, Lefebvre S, Khatir Z, Bontemps S. Investigations on ageing of IGBT transistors under repetitive short-circuits operations. PCIM; 2008.

3. Lutz, Hermann T, Feller M, Bayerer R, Licht T, Amro R. Power cycling induced failure mechanisms in the viewpoint of rough temperature environment. In: Proceedings of the 5th international conference on integrated power electronic systems; 2008. p. 55–8.

4. Selected failure mechanisms of modern power modules;Ciappa;Microelectron Reliab,2002

5. Characterization of ageing failures on power MOSFET devices by electron and ion microscopies;Martineau;Microelectron Reliab,2009

Cited by 37 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A stochastic model-based prognostic for IGBT power module remaining useful life estimation using a physical model-based shape function;2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2024-04-07

2. Applications of Picosecond Laser Acoustics to Power Semiconductor Device: IGBT and MOSFET;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26

3. Effect of Si segregation at grain boundaries on the mechanical behaviours of ageing Al metallization layer in insulated gate bipolar transistor module;Molecular Simulation;2023-06-24

4. An Overview of Multilevel Inverters Lifetime Assessment for Grid-Connected Solar Photovoltaic Applications;Electronics;2023-04-20

5. Lifetime modeling of copper metallization for SiC power electronics;2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2023-04-17

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3