Effect of Si segregation at grain boundaries on the mechanical behaviours of ageing Al metallization layer in insulated gate bipolar transistor module-Reference-Cited by-同舟云学术

Effect of Si segregation at grain boundaries on the mechanical behaviours of ageing Al metallization layer in insulated gate bipolar transistor module

Published:2023-06-24 Issue:13-14 Volume:49 Page:1281-1292
ISSN:0892-7022
Container-title:Molecular Simulation
language:en
Short-container-title:Molecular Simulation

Author:

An Tong¹²,Chen Xiaoxuan¹²,Wang Qi¹²,Han Jing³,Qin Fei¹²,Dai Yanwei¹²,Chen Pei¹²,Gong Yanpeng¹²

Affiliation:

1. Institute of Electronics Packaging Technology and Reliability, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, People’s Republic of China

2. Beijing Key Laboratory of Advanced Manufacturing Technology, Beijing University of Technology, Beijing, People’s Republic of China

3. Institute of Welding and Surface Engineering Technology, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, People’s Republic of China

Funder

National Natural Science Foundation of China

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,General Chemical Engineering,Modeling and Simulation,Information Systems,General Chemistry

Link

https://www.tandfonline.com/doi/pdf/10.1080/08927022.2023.2225632

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5. Observations of grain boundary impurities in nanocrystalline Al and their influence on microstructural stability and mechanical behaviour