Optical studies of strained InGaAs/GaAs single quantum wells-Reference-Cited by-同舟云学术

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Optical studies of strained InGaAs/GaAs single quantum wells

Published:1994-07 Issue:3 Volume:78 Page:315-320
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Shen W.Z.,Tang W.G.,Li Z.Y.,Shen X.C.,Wang S.M.,Andersson T.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference20 articles.

1. An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT

2. Properties of InxGa1−xAs‐GaAs strained‐layer quantum‐well‐heterostructure injection lasers

3. Photoluminescence in strained InGaAs‐GaAs heterostructures

4. Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy

5. Photoluminescence study of strain relaxation in Ga1−xInxAs/GaAs single heterostructures

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature dependent absorption and emission enhancement factors in plasmon coupled semiconductor heterostructures;Active Photonic Platforms XI;2019-09-05

2. Revealing Temperature-Dependent Absorption and Emission Enhancement Factors in Plasmon Coupled Semiconductor Heterostructures;ACS Applied Electronic Materials;2019-07-08

3. Internal electric-field and segregation effects on luminescence properties of quantum wells;Journal of Applied Physics;2005-07-15

4. The influence of surface segregation on the optical properties of quantum wells;Journal of Applied Physics;2004-10

5. Observation of excitonic polariton and broadening of room‐temperature exciton in strained InGaAs/GaAs quantum wells;Journal of Applied Physics;1995-07-15

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