Photoluminescence study of strain relaxation in Ga1−xInxAs/GaAs single heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341324
Reference27 articles.
1. Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition
2. Properties of InxGa1−xAs‐GaAs strained‐layer quantum‐well‐heterostructure injection lasers
3. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
4. Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction
5. Role of experimental resolution in measurements of critical layer thickness for strained‐layer epitaxy
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1. High Quality InxGa1?xAs Epitaxial Layers Grown on GaAs by MOVPE;physica status solidi (a);2002-01
2. Alloying effects on the critical layer thickness in InxGa1−xAs/InP heterostructures analyzed by Raman scattering;Applied Physics Letters;1998-01-26
3. Photomodulated reflectance spectra of In0.2Ga0.8As/GaAs single quantum wells;Applied Physics Letters;1995-04-10
4. Optical studies of strained InGaAs/GaAs single quantum wells;Applied Surface Science;1994-07
5. Influence of Growth Parameters on the Properties of InxGa1-xAs Grown on GaAs by OMVPE;MRS Proceedings;1994
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