Photoluminescence in strained InGaAs‐GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339236
Reference10 articles.
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4. Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction
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1. 3D Bragg Coherent Diffraction Imaging of Extended Nanowires: Defect Formation in Highly Strained InGaAs Quantum Wells;ACS Nano;2022-11-15
2. Real-Time Structural Analysis of Compositionally Graded InGaAs/GaAs(0 0 1) Layers;IEEE Journal of Photovoltaics;2012-01
3. Strain effect in aGaAs−In0.25Ga0.75As−Al0.5Ga0.5Asasymmetric quantum wire;Physical Review B;2000-03-15
4. Optical characterization of AlInGaAs/InGaAs quantum well structures on InGaAs substrates;Journal of Applied Physics;1997-07
5. Absorption spectroscopy studies of strained InGaAs/GaAs single‐quantum wells;Applied Physics Letters;1994-11-21
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