3D Bragg Coherent Diffraction Imaging of Extended Nanowires: Defect Formation in Highly Strained InGaAs Quantum Wells-Reference-Cited by-同舟云学术

3D Bragg Coherent Diffraction Imaging of Extended Nanowires: Defect Formation in Highly Strained InGaAs Quantum Wells

Published:2022-11-15 Issue:12 Volume:16 Page:20281-20293
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Hill Megan O.¹^ORCID,Schmiedeke Paul²^ORCID,Huang Chunyi¹,Maddali Siddharth³,Hu Xiaobing¹⁴^ORCID,Hruszkewycz Stephan O.³^ORCID,Finley Jonathan J.²,Koblmüller Gregor²^ORCID,Lauhon Lincoln J.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States

2. Walter Schottky Institute and Physics Department, Technical University of Munich, Garching85748, Germany

3. Materials Science Division, Argonne National Laboratory, Argonne, Illinois60439, United States

4. The NUANCE Center, Northwestern University, Evanston, Illinois60208, United States

Funder

Deutsche Forschungsgemeinschaft

W. M. Keck Foundation

H2020 European Research Council

National Science Foundation

Division of Materials Research

Argonne National Laboratory

International Institute for Nanotechnology

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c06071

Reference71 articles.

1. Monolithic GaAs/InGaP nanowire light emitting diodes on silicon

2. GaAs–AlGaAs core–shell nanowire lasers on silicon: invited review

3. A review of III–V nanowire infrared photodetectors and sensors

4. Nanowire solar cells for next-generation photovoltaics

5. A III–V nanowire channel on silicon for high-performance vertical transistors

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