Affiliation:
1. MOE Key Laboratory of Material Physics and Chemistry under Extraordinary, School of Physical Science and Technology Northwestern Polytechnical University Xi'an 710072 P. R. China
2. Department of Applied Physics, School of Science Chang'an University Xi'an 710064 P. R. China
3. Shanghai Key Lab. of D&A for Metal‐Functional Materials, School of Materials Science & Engineering Tongji University Shanghai 201804 P. R. China
Abstract
AbstractOver the past century, extensive research has been carried out on various types of microwave absorption (MA) materials, primarily emphasizing mechanism, performance, and even toward smart device. However, the deactivation, a crucial concern for practical applications, has long been long‐neglected. In this work, an in‐depth exploration of the deactivation mechanism reveals a significant competition between metal and oxygen, leading to the replacement of the S‐M (M = Ni and Co) bond by a new S─O bond on the surface of absorber. This substitution initiates a series of collapse effect that introduces additional defective sites and diminishes the potential for charge transport. Subsequently, passive and active anti‐deactivation strategies are developed to target the deactivation. The passive strategy involved intentionally creating electron‐deficient structures at the initial Ni and Co sites in the crystal through the Fe doping engineering, with the objective of preventing the generation of S─O bonds. Furthermore, the active anti‐deactivation strategy allows for the precise control of absorber deactivation and reactivation by employing accelerated thermodynamic and kinetic methods, enabling a reversible transformation of S‐M through competitive reactions with S─O bonds. Finally, a fast deactivation and reactivation method is first proposed promising to stimulate further innovations and breakthroughs in practical applications.
Funder
Fundamental Research Funds for the Central Universities
National Natural Science Foundation of China
Cited by
12 articles.
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