Absorption spectroscopy studies of strained InGaAs/GaAs single‐quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112549
Reference20 articles.
1. An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT
2. Properties of InxGa1−xAs‐GaAs strained‐layer quantum‐well‐heterostructure injection lasers
3. Photoluminescence in strained InGaAs‐GaAs heterostructures
4. Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy
5. Optical investigation of a new type of valence-band configuration inInxGa1−xAs-GaAs strained superlattices
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1. Revealing and Characterizing Dark Excitons through Coherent Multidimensional Spectroscopy;Physical Review Letters;2016-08-23
2. The nonlinear optical properties of a magneto-exciton in a strained Ga 0.2 In 0.8 As/GaAs quantum dot;Chinese Physics B;2013-10
3. Compositional dependence of the bowing parameter for highly strained InGaAs/GaAs quantum wells;Physical Review B;2009-10-06
4. The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2009-09
5. Photoluminescence from colloidal CdS-CdSe-CdS quantum wells;Journal of the Optical Society of America B;2005-05-01
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