The influence of surface segregation on the optical properties of quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1789628
Reference12 articles.
1. Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures
2. Atomic‐scale roughness of GaAs/AlAs interfaces: A Raman scattering study of asymmetrical short‐period superlattices
3. Interface segregation and clustering in strained-layer InGaAs/GaAs heterostructures studied by cross-sectional scanning tunneling microscopy
4. Ex-situinvestigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction
5. In situprobing at the growth temperature of the surface composition of (InGa)As and (InAl)As
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1. Linear and nonlinear optical absorption coefficient and electronic features of triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on barrier widths;Optik;2019-02
2. The effect of barrier width on the electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells;Journal of Molecular Structure;2018-03
3. InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties;Journal of Applied Physics;2016-03-04
4. Comparison of Ga1−xAlxAs/GaAs and Ga1−xlnxAs/GaAs quantum wells as dependent on Al and In concentrations under intense laser field;International Journal of Modern Physics B;2015-10-27
5. Theoretical study of the indium incorporation into III-V compounds revisited: The role of indium segregation and desorption;Journal of Applied Physics;2013-01-21
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