Ex-situinvestigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1621738
Reference14 articles.
1. Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures
2. Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001)
3. Quantification of segregation and mass transport inInxGa1−xAs/GaAsStranski-Krastanow layers
4. Enhanced In surface segregation during molecular-beam epitaxy of (In,Ga)As on (h11) GaAs for small values ofh
5. X-ray diffraction measurement of segregation-induced interface broadening in InxGa1−xAs/GaAs superlattices
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