Ultra-broadband depolarization based on directly-coupled quantum wire-to-well modulation and their aliasing effect for polarization-insensitive light-emitting diodes-Reference-Cited by-同舟云学术

Ultra-broadband depolarization based on directly-coupled quantum wire-to-well modulation and their aliasing effect for polarization-insensitive light-emitting diodes

Published:2023 Issue:44 Volume:15 Page:18044-18052
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Wang Yuhong¹,Tai Hanxu¹,Duan Ruonan¹,Zheng Ming¹,Shi Yue¹,Zhang Jianwei²,Zhang Xing²,Ning Yongqiang²,Wu Jian¹^ORCID

Affiliation:

1. School of Physics, Beihang University, Beijing 102206, China

2. State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

Abstract

A new ultra-broadband depolarization mechanism is proposed, which can solve the polarization-dependence problem in strained quantum structures for polarization-insensitive light-emitting diode applications.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR04423H

Reference45 articles.

1. Strain‐Induced Modification of the Optical Characteristics of Quantum Emitters in Hexagonal Boron Nitride

2. Photoluminescence characterization of interlayer carrier injection from InGaAs quantum well to InGaAs surface quantum dots with respect to GaAs spacer thickness

3. Cadmium-Free and Efficient Type-II InP/ZnO/ZnS Quantum Dots and Their Application for LEDs

4. High-Efficiency, Low Turn-on Voltage Blue-Violet Quantum-Dot-Based Light-Emitting Diodes

5. AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates

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