Enhanced In surface segregation during molecular-beam epitaxy of (In,Ga)As on (h11) GaAs for small values ofh
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.11512/fulltext
Reference31 articles.
1. Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-x As and GaxIn1-x As epitaxial layers grown by molecular beam epitaxy
2. Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures
3. Monolayer-scale optical investigation of segregation effects in semiconductor heterostructures
4. Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells
5. Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE
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