Internal electric-field and segregation effects on luminescence properties of quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1954889
Reference9 articles.
1. In surface segregation in InGaN/GaN quantum wells
2. Spontaneous polarization and piezoelectric constants of III-V nitrides
3. Ti concentration effect on adhesive energy at Cu/TiW interface
4. Interdiffusion of Indium in piezoelectric InGaAs∕GaAs quantum wells grown by molecular beam epitaxy on (11n) substrates
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4. Photoreflectance study of indium segregation in the InGaAs quantum well;SPIE Proceedings;2011-01-18
5. Barrier width dependence of the donor binding energy of hydrogenic impurity in wurtzite InGaN/GaN quantum dot;Journal of Applied Physics;2009-11
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