In surface segregation in InGaN/GaN quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Atomic Scale Indium Distribution in aGaN/In0.43Ga0.57N/Al0.1Ga0.9NQuantum Well Structure
2. GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy
3. Indium segregation in InGaN quantum-well structures
4. Indium Surface Segregation during Growth of (In,Ga)N/GaN Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy
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