Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements-Reference-Cited by-同舟云学术

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Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements

Published:2012-01 Issue:7 Volume:520 Page:3064-3070
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Elsherif O.S.,Vernon-Parry K.D.,Dharmadasa I.M.,Evans-Freeman J.H.,Airey R.J.,Kappers M.J.,Humphreys C.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Analysis of deep traps in hexagonal molecular beam epitaxy-grown GaN by admittance spectroscopy

2. Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing

3. Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes

4. Electrical characterization of Mg‐doped GaN grown by metalorganic vapor phase epitaxy

5. Investigation of Low-Resistance Metal Contacts on p-Type GaN Using the Linear and Circular Transmission Line Method

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4. Investigation of electron transport properties in Li2CO3-doped Bepp2 thin films;Organic Electronics;2015-11

5. Review of using gallium nitride for ionizing radiation detection;Applied Physics Reviews;2015-09

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