Frequency and voltage dependence of admittance characteristics of Al/Al 2 O 3 /PVA:n-ZnSe Schottky barrier diodes
Author:
Funder
UGC
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference42 articles.
1. On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs)
2. Extraction of the device parameters of Al/P3OT/ITO organic Schottky diode using J–V and C–V characteristics
3. Effect of series resistance and interface states on the I–V, C–V and G/ω–V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature
4. The effect of gamma irradiation on electrical and dielectric properties of organic-based Schottky barrier diodes (SBDs) at room temperature
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