Effect of series resistance and interface states on the I–V, C–V and G/ω–V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature-Reference-Cited by-同舟云学术

Effect of series resistance and interface states on the I–V, C–V and G/ω–V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature

Published:2012-01 Issue:1 Volume:12 Page:266-272
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Demirezen S.,Sönmez Z.,Aydemir U.,Altındal Ş.

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference47 articles.

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2. Metal-Semiconductor Contacts;Rhoderick,1988

3. Anomalous Peak in the Forward-Bias C–V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures

4. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

5. Frequency dependence of forward capacitance-voltage characteristics of Schottky barrier diodes

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