Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing-Reference-Cited by-同舟云学术

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Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing

Published:2001-06-15 Issue:12 Volume:89 Page:7960-7965
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Litwin-Staszewska E.,Suski T.,Piotrzkowski R.,Grzegory I.,Bockowski M.,Robert J. L.,Kończewicz L.,Wasik D.,Kamińska E.,Cote D.,Clerjaud B.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1368873

Reference16 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

3. Hole Compensation Mechanism of P-Type GaN Films

4. Hydrogen in GaN: Novel Aspects of a Common Impurity

5. Hydrogenation ofp‐type gallium nitride

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1. Laser induced emission spectra of gallium nitride nanoceramics;Ceramics International;2020-12

2. High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials;Journal of Applied Physics;2020-08-28

3. Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives;Progress in Crystal Growth and Characterization of Materials;2018-09

4. High Temperature Annealing of MBE-grown Mg-doped GaN;Journal of Physics: Conference Series;2017-06

5. The Properties of p-GaN with Different Cp2Mg/Ga Ratios and Their Influence on Conductivity;Journal of Electronic Materials;2016-03-16

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