Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives-Reference-Cited by-同舟云学术

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Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives

Published:2018-09 Issue:3 Volume:64 Page:63-74
ISSN:0960-8974
Container-title:Progress in Crystal Growth and Characterization of Materials
language:en
Short-container-title:Progress in Crystal Growth and Characterization of Materials

Author:

Zajac M.,Kucharski R.,Grabianska K.,Gwardys-Bak A.,Puchalski A.,Wasik D.,Litwin-Staszewska E.,Piotrzkowski R.,Z Domagala J.,Bockowski M.

Funder

Ministerstwo Nauki i Szkolnictwa Wyższego

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference73 articles.

1. Nitride Semiconductors and Devices;Morkoc,1999

2. III–nitrides: Growth, characterization, and properties

3. The Blue Laser Diode;Nakamura,1998

4. GaN Substrates for III-Nitride Devices

5. GaN Technology for Power Electronic Applications: A Review

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5. Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na‐Flux Method and Enlargement of the Substrate Surpassing 6 Inches;physica status solidi (RRL) – Rapid Research Letters;2024-06-26

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