Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1379345
Reference30 articles.
1. GaN: Processing, defects, and devices
2. Electrical characterization of Mg‐doped GaN grown by metalorganic vapor phase epitaxy
3. Frequency dependence of the reverse-biased capacitance of blue and green light-emitting diodes
4. Thermal activation energies of Mg in GaN:Mg measured by the Hall effect and admittance spectroscopy
5. p‐type conduction in Mg‐doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy
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