Analysis of deep traps in hexagonal molecular beam epitaxy-grown GaN by admittance spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368262
Reference13 articles.
1. Emerging gallium nitride based devices
2. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
3. Deep States in GaN Studied by Thermally Stimulated Current Spectroscopy
4. Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy
5. Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy
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2. Photo-induced changes of the surface band bending in GaN: Influence of growth technique, doping and polarity;Journal of Applied Physics;2017-05-28
3. The Properties of p-GaN with Different Cp2Mg/Ga Ratios and Their Influence on Conductivity;Journal of Electronic Materials;2016-03-16
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5. Characterisation of defects in p-GaN by admittance spectroscopy;Physica B: Condensed Matter;2012-08
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