Comparative study on interface and bulk charges in AlGaN/GaN metal–insulator–semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics-Reference-Cited by-同舟云学术

Comparative study on interface and bulk charges in AlGaN/GaN metal–insulator–semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics

Published:2015-11-30 Issue:5S Volume:55 Page:05FH01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Zhu Jie-Jie,Ma Xiao-Hua,Chen Wei-Wei,Hou Bin,Xie Yong,Hao Yue

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference29 articles.

1. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

2. Device Characteristics of AlGaN/GaN MIS-HFET Using Al2O3-HfO2Laminated High-kDielectric

3. Reduced gate leakage and high thermal stability of AlGaN/GaN MIS-HEMTs using ZrO2/Al2O3gate dielectric stack

4. GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiN_x as Gate Dielectric

5. Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

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