Reduced gate leakage and high thermal stability of AlGaN/GaN MIS-HEMTs using ZrO2/Al2O3gate dielectric stack
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=4/a=044101/pdf
Reference25 articles.
1. Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates
2. Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
3. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
4. Effects of Short-Term DC-Bias-Induced Stress on n-GaN/AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as a Gate Dielectric
5. Assessment of GaN Surface Pretreatment for Atomic Layer Deposited High-kDielectrics
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1. Small V th Shift and Low Dynamic R on in GaN MOSHEMT With ZrO2 Gate Dielectric;IEEE Transactions on Electron Devices;2023-11
2. A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation;Applied Physics Letters;2023-05-01
3. Rapid thermal annealing influences on microstructure and electrical properties of Mo/ZrO2/n-Si/Al MISM junction with a high-k ZrO2 insulating layer;Physica B: Condensed Matter;2023-01
4. Quasi-Normally-Off operation via Selective Area Growth in high-K-insulated GaN MIS-HEMTs;2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK);2022-11-28
5. Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics;Materials;2022-10-05
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