Quasi-Normally-Off operation via Selective Area Growth in high-K-insulated GaN MIS-HEMTs-Reference-Cited by-同舟云学术

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Quasi-Normally-Off operation via Selective Area Growth in high-K-insulated GaN MIS-HEMTs

Published:2022-11-28 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
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Author:

Maeda S.¹,Asubar J. T.¹,Nagase I.¹,Urano S.¹,Nezu T.¹,Igarashi T.¹,Baratov A.¹,Yamamoto A.¹,Kuzuhara M.²

Affiliation:

1. University of Fukui,Graduate school of Engineering,Fukui,Japan,910-8507

2. Kwansei Gakuin University,School of Engineering,Hyogo,Japan,669-1337

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9975349/9975304/09975427.pdf?arnumber=9975427

Reference10 articles.

1. Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures

2. Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation

3. Reduced gate leakage and high thermal stability of AlGaN/GaN MIS-HEMTs using ZrO2/Al2O3gate dielectric stack

4. AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2V−1s−1)

5. Enhancement-Mode AlGaN/GaN MIS-HEMTs With High VTH and High IDmax Using Recessed-Structure With Regrown AlGaN Barrier

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